Electronics Free Full Text Characterization Of Sn Xin Solders And Growth mechanism of cu sn full imc joints on polycrystalline and single crystal cu substrate abstract: growth mechanisms of cu sn imc joints bonded at 300°c on polycrystalline and single crystal cu substrates were investigated by scanning electron microscopy (sem) and electron backscatter diffraction (ebsd) technology. 978 1 4799 0498 3 13 $31.00 ©2013 ieee growth mechanism of cu sn full imc joints on polycrystalline and single crystal cu substrate rui zhang, yanhong tian*, baolei liu, chunjin hang.
Table I From Growth Mechanism Of Cu Sn Full Imc Joints On The orientation of cu 3 sn was unrelated to that of cu or cu 6 sn 5 , but had preferred orientations of cu 3 sn (100) parallel to the cu substrate. growth mechanisms of cu sn imc joints bonded at 300°c on polycrystalline and single crystal cu substrates were investigated by scanning electron microscopy (sem) and electron backscatter diffraction (ebsd) technology. Doi: 10.1109 icept.2013.6756690 corpus id: 25444440; growth mechanism of cu sn full imc joints on polycrystalline and single crystal cu substrate @article{zhang2013growthmo, title={growth mechanism of cu sn full imc joints on polycrystalline and single crystal cu substrate}, author={rui zhang and yanhong tian and baolei liu and chunjin hang}, journal={2013 14th international conference on. Since anisotropic properties of cu 6 sn 5 and cu 3 sn grains [14], [15], [16] can largely influence the mechanical and electronic behaviors of cu–sn imc joints, this paper investigated orientation of cu 3 sn in cu–sn imc joints on polycrystalline and on single crystal cu substrates separately by the electron backscattered diffraction (ebsd. The preferred growth full intermetallic compound (imc) interconnect was fabricated using the current driven bonding (cdb) method. the morphology, orientation and growth mechanism of preferred growth η cu6sn5 grains on (011) cu single crystal substrate under current stressing were investigated. four growth directions of slantwise η cu6sn5 grains that have an angle of 60° with the current.
Schematic Of Diffusion Reactions In Cuвђ Sn Imc Growth A Step 1 Cu Since anisotropic properties of cu 6 sn 5 and cu 3 sn grains [14], [15], [16] can largely influence the mechanical and electronic behaviors of cu–sn imc joints, this paper investigated orientation of cu 3 sn in cu–sn imc joints on polycrystalline and on single crystal cu substrates separately by the electron backscattered diffraction (ebsd. The preferred growth full intermetallic compound (imc) interconnect was fabricated using the current driven bonding (cdb) method. the morphology, orientation and growth mechanism of preferred growth η cu6sn5 grains on (011) cu single crystal substrate under current stressing were investigated. four growth directions of slantwise η cu6sn5 grains that have an angle of 60° with the current. The interfacial continuity between solder and its connected substrate is usually provided by nucleation and subsequent growth of intermetallic compounds in the interface for sn based cu solder joints, cu 6 sn 5 and cu 3 sn are the main intermetallic compounds (imc) and cu 6 sn 5 is always formed preferentially [1,2,3,4,5,6,7,8,9,10,11]. these intermetallic compounds grow rapidly and their. Therefore, the sn atoms are less liable to be incorporated into cu 6 sn 5 grains leading to lower growth rate of crystal planes normal to [0001] direction. that is, anisotropy phase structure of cu 6 sn 5 grains leads to slow growth rate of imc layer on fiber structure and equiaxed crystal copper containing prism type imcs. in a word, the above.
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