Advanced packaging technology has become more and more important in the semiconductor industry because of the benefits of higher i o density compared to conventional soldering technology. in advanced packaging technology, copper–copper (cu cu) bonding has become the preferred choice due to its excellent electrical and thermal properties. however, one of the major challenges of cu cu bonding. Search text. search type . add circle outline "cu based thermocompression bonding and cu dielectric hybrid bonding for three dimensional integrated.
Cu based thermocompression bonding and cu dielectric hybrid bonding for three dimensional integrated circuits (3d ics) application download full text pdf read full text. nanomaterials 2023. Cu based thermocompression bonding and cu dielectric hybrid bonding for three dimensional integrated circuits (3d ics) application. huang, yuan chiu; lin, yu xian; hsiung, chien kang et al. in: nanomaterials, vol. 13, no. 17, 2490, 09.2023. research output: contribution to journal › review article › peer review. Cu cu direct interconnects are highly desirable for the microelectronic industry as they allow for significant reductions in the size and spacing of microcontacts. the main challenge associated with using cu is its tendency to rapidly oxidize in air. this research paper describes a method of cu passivation using a self assembled monolayer (sam) to protect the surface against oxidation. however. Therefore, low temperature cu sio 2, cu sicn, and cu polymer hybrid bonding have been developed for advanced packaging applications. furthermore, we present a novel hybrid bonding scheme for metal polymer interfaces that achieves good flatness and an excellent bonding interface without the need for the chemical mechanical polishing (cmp) process.
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